Iodine reaction and passivation of the Ge(111) surface
| Autor: | C. Wigren, M Bjorkqvist, G. Lelay, Mats Göthelid, Ulf O. Karlsson |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
chemistry.chemical_classification
Passivation Annealing (metallurgy) Iodide Analytical chemistry chemistry.chemical_element Germanium Surfaces and Interfaces Condensed Matter Physics Iodine Surfaces Coatings and Films law.invention chemistry X-ray photoelectron spectroscopy Chemisorption law Materials Chemistry Scanning tunneling microscope |
| Zdroj: | Surface Science. 371:264-276 |
| ISSN: | 0039-6028 |
| Popis: | The Ge(111)-I surface has been studied at different I coverages ranging from 0.05 ML up to saturation, and different annealing temperatures, using photoelectron spectroscopy (PES) and scanning tunneling microscopy (STM). At saturation the surface is covered with I in the top site and GeI2 species in the bridge site, coexisting with small islands/clusters comprising GeI2, giving a total coverage of I in GeIx species of 1.15 ML. The chemically induced shifts in the Ge 3d core level are 0.39 eV per attached I atom. The coverage determined from the I 4d core level is higher than 1.15 ML, which we explain by the presence of I not bound to Ge. Annealing at 200°C decreases the iodine coverage, whereas the I 4d and Ge 3d line profiles are practically unchanged. Further heating desorbs the iodide species and restores the virgin c(2 × 8) structure. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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