Chemical Vapor Deposition of GaN from Gallium and Ammonium Chloride
| Autor: | A. N. Red’kin, Z. I. Makovei, A. N. Gruzintsev, V. I. Tatsii, E. E. Yakimov |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Materials science
Photoluminescence Scanning electron microscope General Chemical Engineering Inorganic chemistry Metals and Alloys chemistry.chemical_element Gallium nitride Chemical vapor deposition Inorganic Chemistry chemistry.chemical_compound chemistry Materials Chemistry Deposition (phase transition) Crystallite Gallium Stoichiometry |
| Zdroj: | Inorganic Materials. 40:1049-1053 |
| ISSN: | 0020-1685 |
| DOI: | 10.1023/b:inma.0000046466.62619.e9 |
| Popis: | Thick polycrystalline gallium nitride films were grown by a two-step chemical vapor deposition process using gallium metal and ammonium chloride as starting reagents, at deposition rates of up to 50 μm/h. The deposits were examined by scanning electron microscopy and photoluminescence (PL) spectroscopy. The results demonstrate that the proposed process can be used to grow high-quality, stoichiometric gallium nitride layers with a perfect crystal structure, as evidenced by the high intensity of the 380-nm exciton peak in the room-temperature PL spectra of the films and also by electron-microscopic examination. |
| Databáze: | OpenAIRE |
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