Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal–organic vapor deposition
| Autor: | Byung Oh Jung, Manato Deki, Si-Young Bae, Kaddour Lekhal, Yoshio Honda, Dong-Seon Lee, Jeong Yong Lee, Hiroshi Amano, Sang Yun Kim |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Nanostructure Fabrication Materials science Shell (structure) Nanotechnology 02 engineering and technology General Chemistry Chemical vapor deposition Nitride 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0103 physical sciences General Materials Science Nanorod 0210 nano-technology Layer (electronics) Deposition (law) |
| Zdroj: | CrystEngComm. 18:1505-1514 |
| ISSN: | 1466-8033 |
| Popis: | To extend the availability of nanostructure-based optoelectronic applications, vertically elongated nanorods with precisely controlled morphology are required. For group III nitrides, pulsed-mode growth has recently been reported as an effective method for growing nanorod arrays with geometric precision. Here, we demonstrated the growth of arrays of highly elongated nanorods on Si substrates by metal–organic chemical vapor deposition using a pulsed-mode approach. Unlike the thick and high (or middle)-quality GaN templates normally used, nanorod growth was performed on an ultrathin and low-quality AlN/Si platform. Using kinetically controlled growth conditions and a patterning process, exceptionally long GaN nanorods were achieved with high geometric precision. The grown nanorods showed considerably improved optical and structural properties while remaining in uniform arrays. This approach can be used with a variety of materials to obtain nanorods with high quality, high uniformity, and high aspect ratio, and it can also serve as an effective fabrication method for InAlGaN-alloyed core/shell nanostructures for optoelectronic nanodevices with ultrahigh efficiency. |
| Databáze: | OpenAIRE |
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