Coexistence of induced superconductivity and quantum Hall states in InSb nanosheets
| Autor: | Sen Li, Feifan Su, Hongqi Xu, Dingxun Fan, Jianhua Zhao, Shi-Ping Zhao, Jinhua Zhi, Dong Pan, Ning Kang |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Superconductivity
Materials science Condensed matter physics business.industry Supercurrent Niobium chemistry.chemical_element 02 engineering and technology Electron Quantum Hall effect 021001 nanoscience & nanotechnology 01 natural sciences Semiconductor chemistry Condensed Matter::Superconductivity 0103 physical sciences Proximity effect (superconductivity) 010306 general physics 0210 nano-technology business Nanosheet |
| Zdroj: | Physical Review B. 99 |
| ISSN: | 2469-9969 2469-9950 |
| Popis: | Hybrid superconducting devices based on high-mobility two-dimensional electron gases with strong spin-orbit coupling are considered to offer a flexible and scalable platform for topological quantum computation. Here, we report the realization and electrical characterization of hybrid devices based on high-quality InSb nanosheets and superconducting niobium (Nb) electrodes. In these hybrid devices, we observe gate-tunable proximity-induced supercurrent and multiple Andreev reflections, indicating a transparent Nb-InSb nanosheet interface. The high critical magnetic field of Nb combined with high-mobility InSb nanosheets allows us to exploit the transport properties in the exotic regime where the superconducting proximity effect coexists with the quantum Hall effect. Transport spectroscopy measurements in such a regime reveal an enhancement of the conductance at the quantum Hall plateaus, accompanied by a pronounced zero-bias peak in the differential conductance. We discuss that these features originate from the formation of Andreev edge states at the superconductor-InSb nanosheet interface in the quantum Hall regime. In addition to shedding light on the interplay between superconductivity and quantum Hall effect, our work opens a new possibility to develop hybrid superconducting devices based on 2D semiconductor nanosheets with strong spin-orbit coupling. |
| Databáze: | OpenAIRE |
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