Ultrasensitive Phototransistor Based on WSe2–MoS2 van der Waals Heterojunction
| Autor: | Gwang Hyuk Shin, Hyeok Jun Jin, Sung-Yool Choi, Cheol Min Park, Khang June Lee |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry Mechanical Engineering Photoconductivity Photodetector Bioengineering Heterojunction 02 engineering and technology General Chemistry Specific detectivity 021001 nanoscience & nanotechnology Condensed Matter Physics Photodiode law.invention symbols.namesake law Electric field symbols Optoelectronics General Materials Science van der Waals force 0210 nano-technology business p–n junction |
| Zdroj: | Nano Letters. 20:5741-5748 |
| ISSN: | 1530-6992 1530-6984 |
| DOI: | 10.1021/acs.nanolett.0c01460 |
| Popis: | Band engineering using the van der Waals heterostructure of two-dimensional materials allows for the realization of high-performance optoelectronic devices by providing an ultrathin and uniform PN junction with sharp band edges. In this study, a highly sensitive photodetector based on the van der Waals heterostructure of WSe2 and MoS2 was developed. The MoS2 was utilized as the channel for a phototransistor, whereas the WSe2-MoS2 PN junction in the out-of-plane orientation was utilized as a charge transfer layer. The vertical built-in electric field in the PN junction separated the photogenerated carriers, thus leading to a high photoconductive gain of 106. The proposed phototransistor exhibited an excellent performance, namely, a high photoresponsivity of 2700 A/W, specific detectivity of 5 × 1011 Jones, and response time of 17 ms. The proposed scheme in conjunction with the large-area synthesis technology of two-dimensional materials contributes significantly to practical photodetector applications. |
| Databáze: | OpenAIRE |
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