Photoemission studies of the ZnO/CdS interface

Autor:	D. Schmid, M. Ruckh, H.W. Schock
Rok vydání:	1994
Předmět:	X-ray spectroscopy Materials science Photoemission spectroscopy Analytical chemistry General Physics and Astronomy chemistry.chemical_element Germanium Heterojunction medicine.disease_cause chemistry X-ray photoelectron spectroscopy medicine Crystallite Thin film Ultraviolet
Zdroj:	Journal of Applied Physics. 76:5945-5948
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.358417
Popis:	The highest conversion efficiencies of solar cells based on Cu(In,Ga)Se2 have been achieved using multilayer CdS/ZnO front contacts. The formation of the heterojunction interface between polycrystalline ZnO and CdS has been studied with x‐ray and ultraviolet photoemission spectroscopy. The valence band offset between ZnO and CdS has been determined to be 1.2 eV. No chemical reactions at the interface between ZnO and CdS have been detected up to 200 °C. In order to obtain a standard reference for the band discontinuities the valence band offsets of ZnO and CdS relative to Ge have been measured.
Databáze:	OpenAIRE
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