| Autor: |
Y. Butel, J.C. De Jaeger, J. Hedoire, M. Lefebvre, G. Salmer |
| Rok vydání: |
1995 |
| Předmět: |
|
| Zdroj: |
Simulation of Semiconductor Devices and Processes ISBN: 9783709173633 |
| Popis: |
The study of breakdown phenomena is very important for power devices. Indeed, it constitutes a great limitation for the performance. This paper proposes to study this phenomenon by two means: a two dimensional energy model and a quasi two dimensional model. The aim of this work is the optimization of the shape of the gate-recess in order to improve the breakdown voltage, taking into account the microwave performance. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
