1-D and 2-D Geometry Effects in Uniaxially-Strained Dual Etch Stop Layer Stressor Integrations

Autor:	M. Jahanbani, Jon D. Cheek, N. Cave, S.j. Lian, Konstantin V. Loiko, Mehul D. Shroff, Chi-Hsi Wu, Stanley M. Filipiak, Xiang-Zheng Bo, H.C. Tuan, M. Azrak, Paul A. Grudowski, Wen-Jya Liang, Vance H. Adams, Sinan Goktepeli, Venkat R. Kolagunta, M. Foisy, John J. Hackenberg
Rok vydání:	2006
Předmět:	Transverse plane Materials science CMOS Circuit design Spice MOSFET Silicon on insulator Geometry Ring oscillator PMOS logic
Zdroj:	2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..
Popis:	We report, for the first time, on the 2D boundary effects in a high performance 65nm SOI technology with dual etch stop layer (dESL) stressors. 1D geometry effects, such as poly pitch dependence, and the implications on SPICE models and circuit design are also discussed. It will be shown that PMOS and ring oscillator performance can be significantly enhanced by optimizing the transverse and lateral placement of the dESL boundary
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::33649abd039e0c65218d78c61cea5101 https://doi.org/10.1109/vlsit.2006.1705217 Zobrazit plný text záznamu