Photocarrier drift and recombination in a-Si:H: the vital importance of defect relaxation
| Autor: | Daxing Han, Howard M. Branz, Eric A. Schiff, Douglas C. Melcher, Marvin Silver |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Photocurrent
Silicon Photoconductivity Analytical chemistry chemistry.chemical_element Trapping Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Penning trap Molecular physics Electronic Optical and Magnetic Materials chemistry Materials Chemistry Ceramics and Composites Relaxation (physics) Transient (oscillation) Recombination |
| Zdroj: | Journal of Non-Crystalline Solids. :331-334 |
| ISSN: | 0022-3093 |
| DOI: | 10.1016/0022-3093(93)90557-e |
| Popis: | A model for steady-state and transient photoconductivity incorporating slow atomic relaxation effects for an electron trap is presented. Relaxation effects of this type were recently proposed to account for transient capacitance measurements in a-Si:H. The model accounts for the typical power-law dependence of the steady-state photocurrent upon illumination rate observed in a-Si:H, and is consistent with most features of transient photocurrent measurements measured under optical bias. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|