| Autor: |
Yoshinori Hotta, Shiro Tan, Kurooka Shunji, Yamashita Kosuke, Hirofumi Abe |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
2015 International Conference on Electronic Packaging and iMAPS All Asia Conference (ICEP-IAAC). |
| DOI: |
10.1109/icep-iaac.2015.7111079 |
| Popis: |
Copper-filled anodized aluminum oxide (Cu-filled AAO) will be presented as a potential base material for bonding between the small pads of IC chips. This paper presents a potential material for low temperature bonding for 3D packaging. The material was prepared by filling metal Cu into isolated nano-holes of anodized aluminum oxide (AAO), which were formed by the anodic oxidation treatment of aluminum. The tips of nano-Cu filaments were exposed from AAO surface (Cu nano-nail) so as to bond to Cu pads. In 3D packaging, upper and lower chips can be connected using anisotropic conductive materials. In Cu-filled AAO, the electric conductivity appears only in the vertical direction along filled metal, and insulation property by AAO appears in the horizontal direction. As a result, the anisotropic conductivity ratio (vertical vs. horizontal) is 1017. Thermal anisotropy is also demonstrated, because the filled metal conducts heat in the vertical direction. The anisotropic thermal conductivity ratio is about 34. Thermal conductivity of Cu-filled AAO is 20 times higher than that of the conventional resin, used for under-fill materials. Cu-filled AAO is promising bonding material for the thermal management in 3D integration. The low-temperature-sintering technology using the metallic Nano particle is known already well. The exposed Cu nano-nail can be sintered similar to the metallic nano-particles. We demonstrate the low temperature Cu-Cu bonding capability by using the Cu nano-nail. The direct bonding of Cu was achieved at 523K on this Cu nano-nail on Cu- filled AAO. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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