1.5 μm InGaAsP/InP buried rib waveguide lasers

Autor:	Isamu Sakuma, Junji Hayashi, Takao Furuse, Yoshishige Matsumoto, Tonao Yuasa, Yuichi Ide, Yoichi Isoda, Kentaro Onabe
Rok vydání:	1983
Předmět:	Materials science business.industry General Physics and Astronomy Double heterostructure Laser Semiconductor laser theory law.invention Transverse mode Longitudinal mode law Etching (microfabrication) Optoelectronics Quantum efficiency business Waveguide
Zdroj:	Journal of Applied Physics. 54:50-56
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.331685
Popis:	InGaAsP/InP double heterostructure lasers with buried rib waveguide structure in which p‐quaternary rib waveguide layers surrounded by n‐InP are formed adjacent to the active layers, are proposed for the 1.5–1.6 μm wavelength range and have been successfully fabricated by two‐step liquid phase epitaxial methods combined with a controlled mesa etching technique. In this structure, the rib waveguide layer can provide carrier confinement as well as lateral optical confinement. The low threshold current of 50 mA was obtained with the external differential quantum efficiencies of about 42% and 36% under pulsed and cw operation, respectively. Stable fundamental transverse mode operation was achieved up to three times the threshold current, and single longitudinal mode cw operation was also observed up to 1.5 times threshold current.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::305e42752c22cceeeaff0fe788e44727 https://doi.org/10.1063/1.331685 Zobrazit plný text záznamu