| Autor: |
Ludwig Josef Balk, Erich Kubalek, K. Löhnert, M. Hastenrath |
| Rok vydání: |
1980 |
| Předmět: |
|
| Zdroj: |
Journal of Microscopy. 118:303-308 |
| ISSN: |
0022-2720 |
| DOI: |
10.1111/j.1365-2818.1980.tb00277.x |
| Popis: |
SUMMARY Minority carrier lifetime is one of the basic material properties in optoelectronic devices and material. Both the micrometer range dimensions of the devices and lifetime variations around defects in materials require a lifetime measurement technique with both high spatial and high temporal resolution. In order to meet these requirements a highly efficient cathodoluminescence (CL) measurement system has been developed consisting of a commercial scanning electron microscope extended for integral and spectral CL-measurements and a streak camera with subnanosecond time resolution as time resolving detector. The lifetime is determined by evaluation of CL-decay time after excitation of the specimen by an electron beam pulse, which is blanked in less than 50 ps by an adjustable plate capacitor. The CL-light is collected by an adjustable, ellipsoidal mirror and can be dispersed in a vacuum monochromator. The monochromator exit slit is imaged on to the photocathode of the streak camera, which transforms the temporal distribution of the photon intensity into a lateral distribution on the camera phosphor screen after amplification by an integrated microchannel plate. By this technique it is possible to record the complete CL-decay simultaneously, thus avoiding all measurement falsifications by system instabilities. The resulting intensity distribution is read out by a SIT vidicon camera with subsequent multichannel analyser, providing an intensity plot versus streak time in less then 1 min for each beam spot location. The technique is therefore well suited for lifetime mapping experiments. The best time resolution of the complete system achieved today is about 100 ps. Its performance is here demonstrated by measurements of the temperature dependence of the CL-decay in a highly Se-doped GaAs specimen in the temperature range from 90 K to 300 K. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
Plný text