Structural Perfection and Composition of Gallium-Doped Thermomigration Silicon Layers

Autor:	I. L. Shul’pina, S. G. Simakin, A. N. Zaichenko, S. Yu. Martyushov, B. M. Seredin, Andrey A. Lomov
Rok vydání:	2020
Předmět:	010302 applied physics Diffraction Materials science Physics and Astronomy (miscellaneous) Silicon business.industry Doping chemistry.chemical_element 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology 01 natural sciences Secondary ion mass spectrometry Reflection (mathematics) chemistry Aluminium 0103 physical sciences Optoelectronics Gallium 0210 nano-technology business
Zdroj:	Technical Physics Letters. 46:279-282
ISSN:	1090-6533 1063-7850
DOI:	10.1134/s1063785020030268
Popis:	A technique that allows one to form thick thermomigration silicon layers heavily doped with gallium for prospective power electronic devices is proposed. The dependences of the perfection of structure and the composition of the layers on the temperature of their formation were studied by the methods of X-ray topography, X-ray reflection curves, and secondary-ion mass spectrometry. It is established that the formed layers are single-crystal layers and do not contain misfit dislocations at the interface with the silicon substrate. It is shown that the concentration of gallium in the layers can be varied in the range of (1.6–4.8) × 1019 cm–3, which is higher than the concentration achieved in the case in which silicon is doped with aluminum.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2fd98e676611b2904b848cae78e10d9b https://doi.org/10.1134/s1063785020030268 Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
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