Conductivity and distribution of charge on electroluminescent Si/SiO2 structures investigated by electrostatic force microscopy
| Autor: | Petriina Paturi, Hannu Huhtinen, Hannu-Pekka Hedman, L. Heikkilä, R. Laiho, T. Suominen, Risto Punkkinen |
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| Rok vydání: | 2004 |
| Předmět: |
Chemistry
Electrostatic force microscope Analytical chemistry General Physics and Astronomy Charge density Surfaces and Interfaces General Chemistry Chemical vapor deposition Conductivity Electroluminescence Condensed Matter Physics Poole–Frenkel effect Surfaces Coatings and Films Field electron emission Wafer |
| Zdroj: | Applied Surface Science. 222:131-137 |
| ISSN: | 0169-4332 |
| Popis: | Electroluminescent Si/SiO2/Au layer structures on a p-Si wafer are investigated with electrostatic force microscopy and atomic force microscopy. The samples comprise either four Si/SiO2 layer pairs prepared by chemical vapor deposition or a SiO2 thermal oxide layer grown at 950 °C on the wafer. A 9–13 nm thick Au-film electrode is sputtered on top of the samples. A correlation between the density of electroluminescent dots and distribution of charge on the surface of these structures is found. Measurements of the excitation current through the samples show that the four-layer Si/SiO2/Au structure has Poole–Frenkel type conductivity and the thermal oxide sample is excited through Fowler–Nordheim tunneling. |
| Databáze: | OpenAIRE |
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