Proliferation of the Light and Gas Interaction with GaN Nanorods Grown on a V-Grooved Si(111) Substrate for UV Photodetector and NO2 Gas Sensor Applications
| Autor: | Song-Gang Kim, Na-Hyun Bak, Jae-Eung Oh, Maddaka Reddeppa, Kedhareswara Sairam Pasupuleti, Dong-Jin Nam, Moon-Deock Kim, Hyeonseok Woo |
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| Rok vydání: | 2021 |
| Předmět: |
Photocurrent
Materials science Photoluminescence business.industry Energy conversion efficiency Photodetector 02 engineering and technology Photodetection Substrate (electronics) 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Optoelectronics General Materials Science Quantum efficiency Nanorod 0210 nano-technology business |
| Zdroj: | ACS Applied Materials & Interfaces. 13:30146-30154 |
| ISSN: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.1c04469 |
| Popis: | Although excellent milestones of III-nitrides in optoelectronic devices have been achieved, the focus on the optimization of their geometrical structure for multiple applications is very rare. To address this issue, we exclusively designed a prototype device to enhance the photoconversion efficiency and gas interaction capabilities of GaN nanorods (NRs) grown on a V-grooved Si(100) substrate with Si(111) facets for photodetector and gas sensor applications. Photoluminescence studies have demonstrated an increased surface-to-volume ratio and light trapping for GaN NRs grown on V-grooved Si(111). GaN NRs on V-grooved Si(100) with Si(111) facets exhibited high photodetection performance in terms of photoresponsivity (217 mA/cm2), detectivity (3 × 1013 Jones), and external quantum efficiency (2.73 × 105%) compared to GaN NRs grown on plain Si(111). Owing to the robust interconnection between NRs and a high surface-to-volume ratio, the GaN NRs grown on V-grooved Si(100) with Si(111) facets probed for NO2 detection with the assistance of photonic energy. The photo-assisted sensing makes it possible to detect NO2 gas at the ppb level at room temperature, resulting in significant power reduction. The device showed high selectivity to NO2 against other target gases, such as NO, H2S, H2, NH3, and CO. The device showed excellent long-term stability at room temperature; the humidity effect on the device performance was also examined. The excellent device performance was due to the following: (i) benefited from the V-grooved Si structure, GaN NRs significantly trapped the incident light, which promoted high photocurrent conversion efficiency and (ii) GaN NRs grown on V-grooved Si(100) with Si(111) facets increased the surface-to-volume ratio and thus improved the gas interaction with a better diffusion ratio and high light trapping, which resulted in increased response/recovery times. These results represent an important forward step in prototype devices for multiple applications in materials research. |
| Databáze: | OpenAIRE |
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