Formation of narrow grooves on thin metal layer by focused ion beam etching
| Autor: | S. Murakami, Takashi Kaito, Junichi Yanagisawa, M. Nakayama, Fujio Wakaya, K. Gamo, M. Yoshida |
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| Rok vydání: | 2001 |
| Předmět: |
Double layer (biology)
Materials science business.industry Nanotechnology Giant magnetoresistance Condensed Matter Physics Focused ion beam Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Resist Etching (microfabrication) Optoelectronics Electrical and Electronic Engineering business Layer (electronics) Beam (structure) Line (formation) |
| Zdroj: | Microelectronic Engineering. :877-882 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(01)00444-0 |
| Popis: | Formation of narrow grooves in a thin metal layer was investigated which is a key in the proposed in situ focused ion beam (FIB) process to fabricate novel structures for observation of such phenomena as single electron tunneling and giant magnetoresistance. Using a finely focused beam, narrower line patterns with narrower spacings were delineated on a Ge/nitrocellulose double layer resist. It is shown that the line spacing and length were limited mainly by the process of peeling off of the Ge layer during the FIB etching. |
| Databáze: | OpenAIRE |
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