Novel Window-Structure AlGaInP Visible-Light Laser Diodes with Non-Absorbing Facets Fabricated by Utilizing GaInP Natural Superlattice Disordering

Autor:	Kenichi Kobayashi, Tonao Yuasa, Yoshiyasu Ueno, Seiji Kawata, Tohru Suzuki, Kenji Endo, Hiroaki Fujii, Akiko Gomyo, Kunihiro Hara
Rok vydání:	1990
Předmět:	Materials science business.industry Band gap Superlattice General Engineering General Physics and Astronomy Laser law.invention Active layer Optics law Metalorganic vapour phase epitaxy business Power density Visible spectrum Diode
Zdroj:	Japanese Journal of Applied Physics. 29:L1666
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.29.l1666
Popis:	Window-structure AlGaInP visible-light ( λL=680 nm) laser diodes (LDs) have been fabricated, for the first time, by utilizing GaInP natural superlattice (NSL) disordering with selective Zn diffusion. The bandgap energy for the active layer near the mirror facets is increased by 70 meV by the NSL disordering. An 80 mW output power in a fundamental transverse-mode has been achieved for the uncoated window LDs under 1 µsec long pulsed operations. The maximum output power density for the window LDs is estimated to be 10 MW/cm2, which is five times higher than that for conventional LDs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2d3a0bb17f868614a626998832266541 https://doi.org/10.1143/jjap.29.l1666 Zobrazit plný text záznamu