Bulk AlN crystal growth by direct heating of the source using microwaves

Autor: J. Y. Lin, Jharna Chaudhuri, Bin Liu, Z. U. Rek, D Zhuang, F Mogal, Hongxing Jiang, Martin Kuball, H.E. Huey, James H. Edgar
Rok vydání: 2004
Předmět:
Zdroj: Journal of Crystal Growth. 262:168-174
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2003.10.080
Popis: AlN single crystal platelets up to 2×3 mm 2 and needles 1 mm in diameter and 3 mm in length were successfully grown by directly heating the source materials with microwaves. The process temperature was over 2000°C and the pressure was kept constant at 910 Torr. The growth rate was typically 300 μm h −1 in the c -direction. An emission around 5.5 eV was observed in the photoluminescence spectrum probably caused by magnesium impurity. The dislocation density was low, 6×10 3 cm −2 , as determined by both synchrotron white beam X-ray topography and etching in molten potassium hydroxide–sodium hydroxide eutectic alloy. Etching produced hexagonal pits and hexagonal hillocks on the Al- and N-polar surfaces, respectively. Raman spectra, X-ray topograph, and etch pit densities demonstrate that the crystals have good structural quality.
Databáze: OpenAIRE