Autor: |
J. Y. Lin, Jharna Chaudhuri, Bin Liu, Z. U. Rek, D Zhuang, F Mogal, Hongxing Jiang, Martin Kuball, H.E. Huey, James H. Edgar |
Rok vydání: |
2004 |
Předmět: |
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Zdroj: |
Journal of Crystal Growth. 262:168-174 |
ISSN: |
0022-0248 |
DOI: |
10.1016/j.jcrysgro.2003.10.080 |
Popis: |
AlN single crystal platelets up to 2×3 mm 2 and needles 1 mm in diameter and 3 mm in length were successfully grown by directly heating the source materials with microwaves. The process temperature was over 2000°C and the pressure was kept constant at 910 Torr. The growth rate was typically 300 μm h −1 in the c -direction. An emission around 5.5 eV was observed in the photoluminescence spectrum probably caused by magnesium impurity. The dislocation density was low, 6×10 3 cm −2 , as determined by both synchrotron white beam X-ray topography and etching in molten potassium hydroxide–sodium hydroxide eutectic alloy. Etching produced hexagonal pits and hexagonal hillocks on the Al- and N-polar surfaces, respectively. Raman spectra, X-ray topograph, and etch pit densities demonstrate that the crystals have good structural quality. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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