The Effect of High-Pressure Hydrogen or Deuterium Annealing on Electrical Performance of Indium Gallium Zinc Oxide Thin-Film Transistors

Autor:	An Hoang-Thuy Nguyen, Manh-Cuong Nguyen, Anh-Duy Nguyen, No-Hwal Park, Seung Joon Jeon, Daewoong Kwon, Rino Choi
Rok vydání:	2023
Předmět:	Electrical and Electronic Engineering Electronic Optical and Magnetic Materials
Zdroj:	IEEE Transactions on Electron Devices. 70:1085-1088
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2023.3241119
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2ceb1762a4865caac2032beae7ea6dcc https://doi.org/10.1109/ted.2023.3241119 Zobrazit plný text záznamu