Two-dimensional island density in homoepitaxy on Si(111)7×7
| Autor: | F. Thibaudau |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Coalescence (physics)
Surface diffusion Condensed matter physics Silicon Chemistry Semiconductor materials Nucleation chemistry.chemical_element Crystal growth Surfaces and Interfaces Condensed Matter Physics Surfaces Coatings and Films Deposition rate Materials Chemistry Physical chemistry Standard theory |
| Zdroj: | Surface Science. 416:L1118-L1123 |
| ISSN: | 0039-6028 |
| DOI: | 10.1016/s0039-6028(98)00630-x |
| Popis: | We study the two-dimensional island density in the first stage of silicon deposition on Si(111)7×7. Taking into account the coalescence-deconstruction mechanisms proposed by Tochihara and Shimada, we evaluated the density N S of 2D islands as a function of the temperature and the deposition rate. We show that, in contrast to the standard theory, N S does not depend on surface diffusion. Therefore, no information concerning the surface diffusion can be given from the experimental study of the density of 2D islands on Si(111)7×7. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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