Deposition of grid-like single-crystal Ce2O3 thin films on LaAlO3(100) substrate by pulsed laser deposition
| Autor: | Mustafa Tolga Yurtcan |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Cerium oxide Materials science Scanning electron microscope Substrate (electronics) Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Pulsed laser deposition Chemical engineering X-ray photoelectron spectroscopy 0103 physical sciences Deposition (phase transition) Electrical and Electronic Engineering Thin film Single crystal |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 32:3854-3862 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/s10854-020-05129-1 |
| Popis: | Oxygen-deficient Ce2O3 growth requires reduction of CeO2 with hydrogen gas and high temperatures. In this study, a 2-year desiccated target with different oxygen-deficient phases was used as a pellet in order to deposit cerium oxide thin films on LaAlO3 substrates from 100 to 800 °C by pulsed laser deposition. Desiccated target utilization resulted in pure Ce2O3 and CeO2–Ce2O3 mixture thin films verified by X-ray diffraction. Morphology of the thin films was investigated by scanning electron microscope, and seen that Ce2O3 films have grid-like surface formation. A fresh target is prepared and used in order to compare the crystal structure of the desiccated target. Experiments repeated with a fresh target and X-ray photoelectron spectroscopy of cerium oxide films indicated that Ce2O3 growth depends on target stoichiometry. Further desiccation of the target resulted in single-crystal Ce2O3 growth in all temperatures between 100 and 800 °C, attributed to stoichiometric transfer of the target composition. |
| Databáze: | OpenAIRE |
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