Understanding and Quantifying iDS-VDSOverlap Losses in Switched-Inductor Power Supplies
| Autor: | Gabriel A. Rincon-Mora, Guillaume Guerin |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Computer science
020208 electrical & electronic engineering Energy conversion efficiency Semiconductor device modeling 02 engineering and technology Inductor Capacitance Power (physics) Logic gate MOSFET Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Electronic engineering Diode |
| Zdroj: | ICECS |
| DOI: | 10.1109/icecs49266.2020.9294959 |
| Popis: | IV-overlap power losses play an important role in the overall conversion efficiency of a switched-inductor power supply, which is why a clear understanding of its mechanism is necessary. This paper proposes an insightful model with device-based expressions. The model accounts for the non-linear and dynamic behavior of gate capacitances in switching MOSFETs and reverse-recovery effects produced by interconnected diodes, which are largely absent in the state of the art. Calculated and simulated overlap losses with and without reverse recovery are within ±10%. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|