Comparison of optical to injection excitation in GaAs heterostructure lasers
| Autor: | J. J. Hsieh, M. C. Finn, J. A. Rossi, S. R. Chinn |
|---|---|
| Rok vydání: | 1974 |
| Předmět: |
Materials science
business.industry Quantum heterostructure Energy conversion efficiency Physics::Optics General Physics and Astronomy Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser law.invention Optical pumping Condensed Matter::Materials Science Optics law Excited state Optoelectronics business Electrical efficiency Excitation |
| Zdroj: | Journal of Applied Physics. 45:5383-5388 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.1663248 |
| Popis: | By using the same GaAs–Ga1−xAlxAs heterostructure material to make both optically excited and junction lasers we have compared the performance of the two classes of lasers under pulsed room‐temperature operation. We find that junction lasers have higher differential quantum efficiencies for reasons which are probably inherent in the excitation technique. However, the power efficiencies are higher for the optically pumped samples; by optical excitation of a single heterostructure, we have obtained 20% power conversion efficiency, a factor of 2 better than previous results. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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