2D analytical modelling of asymmetric junctionless dual material double gate MOSFET for biosensing applications considering steric hindrance issue
| Autor: | Arighna Basak, Arpan Deyasi, Angsuman Sarkar |
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| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | Physica Scripta. 98:054003 |
| ISSN: | 1402-4896 0031-8949 |
| Popis: | The current manuscript for Asymmetric Junctionless Dual Material Double Gate MOSFET (AJDMDG MOSFET) biosensor reports improved sensitivity for both threshold voltage and ON-current. In the presence of high-K dielectric material, the device was built using both neutral and charged biomolecules. After calculating the minimal surface potential, the threshold voltage is calculated by solving the 2D Poisson’s equation using a parabolic-potential configuration under realistic boundary circumstances. Analytical results show good agreement with TCAD simulation, prompting an exploration of threshold voltage sensitivity with front-gate voltage changes of all possible dimensions. Corresponding drain current sensitivity with a higher ON-to-OFF current ratio is theoretically estimated and compared with identical DGFET architecture, resulting in a significant improvement for all possible step patterns when steric hinderance is considered for moderately filled cavities; this aids in detecting both labelled and label-free electrical species at lower concentration levels. |
| Databáze: | OpenAIRE |
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