Band alignment of BeO gate dielectric grown by atomic-layer deposition on AlGaN/GaN HEMTs
| Autor: | Do Hwan Jung, Christopher W. Bielawski, Yoonseo Jang, Seonno Yoon, Jungwoo Oh, Jung Hwan Yum, Eric S. Larsen, Seung Min Lee |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Beryllium oxide Band gap Gate dielectric General Physics and Astronomy Gallium nitride 02 engineering and technology 010402 general chemistry 01 natural sciences law.invention chemistry.chemical_compound Atomic layer deposition X-ray photoelectron spectroscopy law business.industry Electron energy loss spectroscopy Transistor Surfaces and Interfaces General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences Surfaces Coatings and Films chemistry Optoelectronics 0210 nano-technology business |
| Zdroj: | Applied Surface Science. 505:144107 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2019.144107 |
| Popis: | In this study, we demonstrated the band alignment between a BeO and AlGaN/GaN heterointerface. The bandgap of the BeO film was measured to be 8.2 ± 0.05 eV by reflection electron energy loss spectroscopy. A valence band offset of the BeO/AlGaN interface was determined to be 1.1 ± 0.1 eV by X-ray photoelectron spectroscopy. Based on the spectral analysis result, the conduction band offset was calculated to be 3.2 ± 0.1 eV. When BeO was used as the gate dielectric of an AlGaN/GaN transistor, the on/off current ratio was improved to 107. The results of the band alignment and electrical testing open up opportunities for the application of BeO films to the gate dielectric of GaN-based high-power devices. |
| Databáze: | OpenAIRE |
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