Effect of annealing after CdS layer deposition on Cu2ZnSn(S,Se)4 solar cells fabricated from nanoparticles
| Autor: | Akira Yamada, Takuya Ebi, Naoki Suyama, Kanta Sugimoto, Kazuyoshi Nakada |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Equivalent series resistance Annealing (metallurgy) General Engineering General Physics and Astronomy Nanoparticle 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Post annealing Crystallinity symbols.namesake Chemical engineering symbols Grain boundary 0210 nano-technology Raman spectroscopy Current density |
| Zdroj: | Japanese Journal of Applied Physics. 57:08RC06 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.7567/jjap.57.08rc06 |
| Popis: | We investigated the effect of post annealing following CdS deposition on Cu2ZnSn(S,Se)4 solar cells fabricated from nanoparticles. The fill factor and short-circuit current density of Cu2ZnSn(S,Se)4 solar cells increase by applying post annealing. Raman spectra showed that the crystallinity of CdS was improved. Electron-beam-induced current measurement revealed that the carrier transport near grain boundaries was improved by post annealing. The improvement of CdS/Cu2ZnSn(S,Se)4 interfacial properties and carrier transport near grain boundaries causes decreases in ideality factor and series resistance, leading to the improvement of fill factor. |
| Databáze: | OpenAIRE |
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