Structural Comparison of Hydrogen Silsesquioxane Based Porous Low-k Thin Films Prepared with Varying Process Conditions

Autor:	Wei Chen, Eric S. Moyer, Eric K. Lin, Hae-Jeong Lee, Howard Wang, Wen-Li Wu
Rok vydání:	2002
Předmět:	Permittivity General Chemical Engineering Analytical chemistry General Chemistry Dielectric Small-angle neutron scattering X-ray reflectivity chemistry.chemical_compound chemistry Materials Chemistry Thin film Porosity Porous medium Hydrogen silsesquioxane
Zdroj:	Chemistry of Materials. 14:1845-1852
ISSN:	1520-5002 0897-4756
DOI:	10.1021/cm011569h
Popis:	The structures of hydrogen silsesquioxane based porous low dielectric constant (low-k) films (XLK) prepared with varying process conditions are characterized using a combination of high-energy ion scattering, X-ray reflectivity, and small-angle neutron scattering. We measure the film thickness, average mass density, density depth profile, wall density, porosity, average pore size, pore spacing, pore connectivity, and atomic composition. We compare samples with varying dielectric constants and degrees of cure or Si-H bonding fraction. The structural parameters are correlated with the chemical bond structure as measured by Fourier transform infrared spectroscopy. The density profiles of the porous films were uniform, with a slight densification observed at the film surface. Films with similar k values but varying degrees of cure have almost identical structural characteristics. Lower dielectric constant films have larger porosities and average pore sizes but lower wall densities. The process conditions used to alter the dielectric constant affect not only the porosity but also many other structural parameters such as the wall density.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2a9404ed5b13cbbe6e2ad7c407a5870b https://doi.org/10.1021/cm011569h Zobrazit plný text záznamu