Ion-Implanted Screen-Printed n-Type Solar Cell With Tunnel Oxide Passivated Back Contact
| Autor: | Keeya Madani, Atul Gupta, Ajay Upadhyaya, Young-Woo Ok, Vinodh Chandrasekaran, Vijaykumar Upadhyaya, Ajeet Rohatgi, Brian Rounsaville, Chel-Jong Choi, Elizabeth Chang, Vijay Yelundur, Keith Tate |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Silicon Annealing (metallurgy) Analytical chemistry Oxide chemistry.chemical_element 02 engineering and technology 01 natural sciences law.invention Metal chemistry.chemical_compound law 0103 physical sciences Solar cell Wafer Electrical and Electronic Engineering Common emitter 010302 applied physics Doping 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry visual_art visual_art.visual_art_medium 0210 nano-technology |
| Zdroj: | IEEE Journal of Photovoltaics. 6:153-158 |
| ISSN: | 2156-3403 2156-3381 |
| DOI: | 10.1109/jphotov.2015.2496861 |
| Popis: | This paper shows the results and the limitations of a 21% N-Cz 239-cm2 screen-printed cell with blanket p+ emitter and n+ back surface field. In addition, we show the properties and impact of tunnel oxide capped with doped n+ polysilicon and metal on the back side, which can overcome those limitations. Since both the doped n+ layer and the metal contact are outside the bulk silicon wafer, the Jo is dramatically reduced, resulting in much higher $V_{{\rm oc}}$ . Process optimization has resulted in high $iV_{{\rm oc}}$ of 728 mV on symmetric structures. The unmetallized cell structure with Al2O3/SiN passivated lightly doped p+ emitter and a tunnel oxide/n+ poly back also gave high $iV_{{\rm oc}}$ of 734 mV. The finished screen-printed 132-cm2 device gave a $V_{{\rm oc}}$ of 683 mV, $J_{{\rm sc}}$ of 39.4 mA/cm2, FF of 77.6%, and an efficiency of 20.9%. Cell analysis show that implementation of a selective emitter can give higher efficiency. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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