Characteristics of Au/Bi3.25La0.75Ti3O12/Si3N4/Si Ferroelectric Field Effect Transistors

Autor:	Kuang-woo Nam, Jungsuk Lee, Jaemoon Pak, Gwangseo Park, Eunjong Ko, Joo Young Kim
Rok vydání:	2005
Předmět:	Materials science Annealing (metallurgy) Bismuth titanate Analytical chemistry Biasing Condensed Matter Physics Ferroelectricity Electronic Optical and Magnetic Materials Pulsed laser deposition chemistry.chemical_compound chemistry Torr Field-effect transistor Thin film
Zdroj:	Ferroelectrics. 328:127-131
ISSN:	1563-5112 0015-0193
DOI:	10.1080/00150190500311599
Popis:	Pulsed laser deposition of ferroelectric Bi 3.25 La 0.75 Ti3 O 12 thin films was carried out for 5 mins at a substrate temperature of 400°C and a given partial oxygen pressure of 200 m Torr. Studies on the electrical properties of a metal-ferroelectric-insulator-semiconductor (MFIS) field effect transistor using Au/Bi 3.25 La 0.75 Ti 3 O 12 /Si3N 4 /Si have been conducted through measurements from capacitance-voltage and memory window characteristics for films prepared with different annealing temperatures and applied bias voltages. The films showed c-axis crystallizations at higher annealing temperatures but on the other hand, the memory window values had a tendency to decrease with respect to increasing temperatures. As the bias voltage was varied at 3 V, 5 V, 7 V, and 10 V for the film annealed at 700°C, the memory window values were measured to be 0.2 V, 0.36 V, 0.8 V, and 1 V, respectively.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2a5923c1c66a1a67be5a37ba4c137724 https://doi.org/10.1080/00150190500311599 Zobrazit plný text záznamu