Self-aligned μTrench phase-change memory cell architecture for 90nm technology and beyond

Autor:	R. Fackenthal, Ferdinando Bedeschi, Davide Erbetta, Roberto Bez, T. Marangon, G. Atwood, Enrico Varesi, Pietro Petruzza, Agostino Pirovano, M. Magistretti, R. Harrigan, Fabio Pellizzer, I. Tortorelli
Rok vydání:	2007
Předmět:	Non-volatile memory Phase-change memory Engineering business.industry Sense amplifier Interleaved memory Electronic engineering Non-volatile random-access memory Semiconductor memory Memory refresh business Computer memory
Zdroj:	ESSDERC 2007 - 37th European Solid State Device Research Conference.
DOI:	10.1109/essderc.2007.4430918
Popis:	A novel self-aligned muTrench-based cell architecture for phase change memory (PCM) process is presented. The low-programming current and the good dimensional control of the sub-lithographic features achieved with the muTrench structure are combined with a self-aligned patterning strategy that simplify the integration process in term of alignment tolerances and of number of critical masks. The proposed architecture has been integrated in a 90 nm 128 Mb vehicle with programming currents of 300 muA and good distributions, demonstrating its suitability for the production of high-density PCM arrays at 90 nm and beyond.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2a34ef6ff6b19d56d0807bacb780aa64 https://doi.org/10.1109/essderc.2007.4430918 Zobrazit plný text záznamu