Strain tuning of the emission axis of quantum emitters in an atomically thin semiconductor
| Autor: | Hyowon Moon, Stephen Wu, Kumarasiri Konthasinghe, Arunabh Mukherjee, Wenhui Hou, Liangyu Qiu, Tara Peña, Dirk Englund, Carla Watson, Nick Vamivakas, Chitraleema Chakraborty |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry Heterojunction Atomic and Molecular Physics and Optics Titanate Electronic Optical and Magnetic Materials Condensed Matter::Materials Science chemistry.chemical_compound symbols.namesake Strain engineering Semiconductor chemistry Electric field Monolayer symbols Physics::Accelerator Physics Tungsten diselenide Optoelectronics van der Waals force business |
| Zdroj: | Optica. 7:580 |
| ISSN: | 2334-2536 |
| Popis: | Strain engineering is a natural route to control the electronic and optical properties of two-dimensional (2D) materials. Recently, 2D semiconductors have also been demonstrated as an intriguing host of strain-induced quantum-confined emitters with unique valley properties inherited from the host semiconductor. Here, we study the continuous and reversible tuning of the light emitted by such localized emitters in a monolayer tungsten diselenide embedded in a van der Waals heterostructure. Biaxial strain is applied on the emitters via strain transfer from a lead magnesium niobate–lead titanate (PMN-PT) piezoelectric substrate. Efficient modulation of the emission energy of several localized emitters up to 10 meV has been demonstrated on application of a voltage on the piezoelectric substrate. Further, we also find that the emission axis rotates by ∼ 40 ∘ as the magnitude of the biaxial strain is varied on these emitters. These results elevate the prospect of using all electrically controlled devices where the property of the localized emitters in a 2D host can be engineered with elastic fields for an integrated opto-electronics and nano-photonics platform. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|