| Autor: |
Todd Henry, Mei-Ju Chen, T. Toh, Yu-Shan Chen, Steve Ji, Pin-Yuan Yu, Scott Wei, Chi-Ren Hung, Yiliang Lin, Alex Hsu, H. L. Sun, B. Colombeau, Wei-Ming Wang, Kyu-Ha Shim, Michael Hsiao, Chien-Hua Chu, Wei Zou, Li-Yuan Cheng, Lester Chiou, Jay Huang, B.N. Guo |
| Rok vydání: |
2011 |
| Předmět: |
|
| Zdroj: |
11th International Workshop on Junction Technology (IWJT). |
| DOI: |
10.1109/iwjt.2011.5969989 |
| Popis: |
Co-implantation has been proven to be an effective method to reduce Transient Enhanced Diffusion (TED). In this paper, the effect of Carbon co-implant energy, dose, and combined with Fluorine implants were investigated to control TED for a contact Phosphorus. With optimized co-implant conditions, Dynamic Random Access Memory (DRAM) device wafers were used to verify that the Epi process window can be enlarged due to better control of Phosphorus TED. The study revealed that Carbon suppresses the Phosphorus diffusion tailing and reduces Gate Induced Drain Leakage (GIDL) without degrading Vt and contact resistance performances. With the reduction of Phosphorus diffusion and GIDL, thinner selective Epi layer can be tolerated, resulting in widened process window of Epi final thickness and increased selective Epi process margin. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
