Through-hole processing of aluminum nitride and silicon wafers using short-pulse lasers

Autor: Masaki Kanai, Takashi Arisawa, Kyoichi Deki, Fumiaki Matsuoka, Hiroyuki Takizawa
Rok vydání: 2004
Předmět:
Zdroj: SPIE Proceedings.
ISSN: 0277-786X
DOI: 10.1117/12.596745
Popis: Compact short pulse (200 - 350 ps) laser systems using SBS and SRS pulse compression techniques have been constructed. Fine processing of aluminum nitride and silicon wafer has been studied by using these laser pulses and compared with the results processed by 60 femto second laser system. Through-holes are formed on wafers by irradiation of the laser pulses, and the relationship between hole shapes and the processing conditions has been studied. The hole shape relates with the focusing length of the lens, laser fluence, pulse width and the wave length. Trepanning technique has been examined also to improve the hole shape. The result is quite.© (2004) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Databáze: OpenAIRE