Ultraprecision finishing technique by numerically controlled sacrificial oxidation
| Autor: | Kazuto Yamauchi, Yasuhisa Sano, Takaya Masuda, Hidekazu Mimura |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Materials science
Silicon business.industry Silicon on insulator chemistry.chemical_element Nanotechnology Surface finish Condensed Matter Physics Inorganic Chemistry Dwell time chemistry Materials Chemistry Surface roughness Optoelectronics Wafer Field-effect transistor business Layer (electronics) |
| Zdroj: | Journal of Crystal Growth. 310:2173-2177 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2007.11.094 |
| Popis: | A silicon-on-insulator (SOI) wafer is a semiconductor substrate used for high-performance devices. An ultrathin and extremely uniform SOI layer is required with the downsizing of devices. In this paper, numerically controlled sacrificial oxidation using localized atmospheric-pressure plasma was applied to the ultraprecision finishing of an SOI wafer. In a basic experiment, the relationship between the oxidation thickness profile and the dwell time was described. Surface roughness was also measured using an atomic force microscope. As a result of applying this finishing technique to a commercially available φ 300 mm SOI wafer, the standard deviation of the thickness of the top silicon layer was successfully improved from 0.415 to 0.127 nm. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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