Stabilizing the Fermi Level of Cr-Doped Magnetic Topological Insulators by Al Passivation
| Autor: | Qixun Guo, Shibing Long, Yang Liu, Qi Zheng, Shanwu Yang, Shixuan Du, Tao Liu, Lijin Wang, Jiao Teng, Yu Wu, Guanghua Yu, Dongwei Wang, Yu Yan, Xiulan Xu |
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| Rok vydání: | 2019 |
| Předmět: |
Work (thermodynamics)
Materials science Passivation Condensed matter physics Fermi level Doping Quantum anomalous Hall effect 02 engineering and technology Sputter deposition 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials symbols.namesake General Energy Topological insulator symbols Physical and Theoretical Chemistry 0210 nano-technology Quantum computer |
| Zdroj: | The Journal of Physical Chemistry C. 123:3823-3828 |
| ISSN: | 1932-7455 1932-7447 |
| Popis: | The quantum anomalous Hall effect (QAHE) observed in magnetically doped topological insulators is not only fundamentally interesting but also has great potential applications such as quantum computation. To experimentally realize the QAHE, the Fermi level (EF) needs to be stabilized in the tiny surface-state gap. However, for topological insulators, even a very short time exposure to the atmosphere can induce a large EF shift. In this work, magnetic topological insulator Cr0.27(Bi0.43Sb0.63)1.73Te3 (CBST) thin-films are successfully prepared via magnetron sputtering, which is a more universal, efficient, and affordable method for application. Then, the evolution of the EF position has been investigated as a function of the exposure time in the air through gate-dependent transport measurements. This study reveals that the EF position can be stabilized by in situ Al passivation with carrier doping significantly reduced, and the oxidations of Bi and Te atoms can also be suppressed. The availability of wide c... |
| Databáze: | OpenAIRE |
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