Characterization of Nanoscale Lattice Strains in Si CMOS by Convergent Beam Electron Diffraction (CBED)

Autor:	Moon J. Kim, P.J. Jones, P.R. Chidambaram, D K Cha, Jinhui Jeanne Huang, R.B. Irwin
Rok vydání:	2005
Předmět:	Materials science Optics Reflection high-energy electron diffraction Electron diffraction CMOS business.industry Lattice (order) Optoelectronics Convergent beam business Instrumentation Nanoscopic scale Electron backscatter diffraction
Zdroj:	Microscopy and Microanalysis. 11
ISSN:	1435-8115 1431-9276
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::287c5a4ce8a695b986e71d044e834991 https://doi.org/10.1017/s143192760550816x Zobrazit plný text záznamu