Modification of Zn ion hot implanted Si by swift Xe ion irradiation
| Autor: | V. S. Kulikauskas, Vladimir Privezentsev, O. S. Zilova, Kirill D. Shcherbachev, N. Yu. Tabachkova, A. A. Burmistrov, K. B. Eidelman, V.A. Skuratov |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Nuclear and High Energy Physics Materials science Physics::Instrumentation and Detectors Scanning electron microscope Physics::Medical Physics Analytical chemistry Nanoparticle 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Fluence Ion Transmission electron microscopy 0103 physical sciences Irradiation Dislocation 0210 nano-technology Instrumentation Single crystal |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 460:56-59 |
| ISSN: | 0168-583X |
| DOI: | 10.1016/j.nimb.2019.01.040 |
| Popis: | The single crystal CZ n-Si(1 0 0) substrates were implanted by 64Zn+ ions with a fluence of 5 × 1016/cm2 and energy of 50 keV to form Zn nanoparticle (NP). During implantation, the Si substrate the temperature was constant at about 350 °C. After that, the samples were irradiated at room temperature by 167 MeV 132Xe26+ ions with fluence at 7.5 × 1014/cm2 at 45° incident angle. The sample surface topology before and after Xe ion irradiation was studied using scanning electron microscopy. Structural changes in pre-implanted and Xe ion irradiated samples were examined by transmission electron microscopy in cross-sectional mode. It was found that swift Xe ion irradiation results in arise of radiation-induce defect of different kind. Defect structure of Si substrate consists of small-angle boundaries, dislocation and interstitial type planar defects. After swift Xe ion irradiation the form change of Zn NPs and increase of the NP average size were observed. |
| Databáze: | OpenAIRE |
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