| Autor: |
Janna R. B. Casady, Hrishikesh Das, Swapna Sunkari, Josh Rodgers, Timothy R. Oldham |
| Rok vydání: |
2013 |
| Předmět: |
|
| Zdroj: |
Materials Science Forum. :221-224 |
| ISSN: |
1662-9752 |
| DOI: |
10.4028/www.scientific.net/msf.740-742.221 |
| Popis: |
Homoepitaxial layers with very good thickness and doping uniformity were grown on 4 inch 4˚ off-axis substrates in a 10x100mm planetary reactor. Process optimizations resulted in reduction of the size of the triangular defects. Aggressive pre-etching of the substrate prior to growth resulted in further suppression of the triangular defect concentration from 3-5cm-2to 0.5cm-2using the same growth processes. Even imperfect areas of the substrate with scratches show suppressed nucleation of triangular defects. JBS diodes with triangular defects show increased leakage depending on the size of the defects. This effect is more pronounced at higher voltages. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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