On-Chip Optical Interconnect
| Autor: | Keishi Ohashi, Seiichi Itabashi, Hiroaki Yukawa, Masayuki Mizuno, Masafumi Nakada, T. Watanabe, M. Kinoshita, N. Suzuki, Jun Akedo, T. Ueno, Kenichi Nishi, Koji Yamada, Tai Tsuchizawa, Koichi Nose, Daisuke Okamoto, S. Torii, T. Shimizu, Akiko Gomyo, Junichi Fujikata, K. Furue, Tsutomu Ishi, Jun Ushida |
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| Rok vydání: | 2009 |
| Předmět: |
Transimpedance amplifier
Materials science business.industry Optical cross-connect Optical interconnect Nanophotonics Photodetector Optical performance monitoring Photodiode law.invention law Optical transistor Hardware_INTEGRATEDCIRCUITS Electronic engineering Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Proceedings of the IEEE. 97:1186-1198 |
| ISSN: | 0018-9219 |
| DOI: | 10.1109/jproc.2009.2020331 |
| Popis: | We describe a cost-effective and low-power-consumption approach for on-chip optical interconnection. This approach includes an investigation into architectures, devices, and materials. We have proposed and fabricated a bonded structure of an Si-based optical layer on a large-scale integration (LSI) chip. The fabricated optical layer contains Si nanophotodiodes for optical detectors, which are coupled with SiON waveguides using surface-plasmon antennas. Optical signals were introduced to the optical layer and distributed to the Si nanophotodiodes. The output signals from the photodiodes were sent electrically to the transimpedance-amplifier circuitries in the LSI. The signals from the photodiodes triggered of the circuitries at 5 GHz. Since electrooptical modulators consume the most power in on-chip optical interconnect systems and require a large footprint, they are critical to establish on-chip optical interconnection. Two approaches are investigated: 1) an architecture using a fewer number of modulators and 2) high electrooptical coefficient materials. |
| Databáze: | OpenAIRE |
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