High-Speed Selector–Driver Using Abrupt Delta-Doped InP/InGaAs/InP DHBTs
| Autor: | Rachid Driad, Dan Ritter, R. E. Makon |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Materials science
business.industry Bipolar junction transistor Doping Integrated circuit Electronic Optical and Magnetic Materials law.invention Gallium arsenide chemistry.chemical_compound chemistry law Low-power electronics Indium phosphide Optoelectronics Electrical and Electronic Engineering business Indium gallium arsenide Voltage |
| Zdroj: | IEEE Electron Device Letters. 32:1059-1061 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | This letter reports the potential of an InP-based double-heterojunction bipolar transistor (DHBT) using a thin highly doped n+-InP layer inserted at the base-collector junction. Molecular-beam-epitaxy-grown abrupt pulse-doped InP-InGaAs-InP DHBTs ensure very high current gains of ~ 90, low saturation voltages of less than 1 V, and high cutoff frequencies of ~ 350 GHz. Using this technology, a compact high-speed high-voltage multiplexer-driver integrated circuit (IC) suitable for high-speed signal processing and communication systems has been designed and fabricated. The IC has successfully been measured at 112 Gb/s with very clear eye openings of up to 2 Vpp with a power consumption of 2 W. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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