Autor: |
Kurt G. Ronse, Harry Botermans, Kouros Ghandehari, Peter De Bisschop, Luc Van den Hove, Maaike Op de Beeck, John A. Lilygren, Jo Finders, Daniel Claire Baker, Mireille Maenhoudt, Patrick Jaenen, Geert Vandenberghe |
Rok vydání: |
1997 |
Předmět: |
|
Zdroj: |
SPIE Proceedings. |
ISSN: |
0277-786X |
DOI: |
10.1117/12.275973 |
Popis: |
In this paper, the results of an NA-sigma optimisation study are reported, carried out experimentally for an advanced ASML PAS5500/300 deep-UV stepper. The work has been primarily focused on a 0.25 and sub-0.25 mu m gate layer in a logic CMOS process. A positive and negative tone resist process have been compared in terms of CD control and line-end shortening. Dry etch effects and across-field behaviour has been taken into account. Furthermore the contact level of the 0.25 mu m process have been optimised. Effects of layer dependent NA-sigma settings on overlay have been studied. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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