Three-dimensional resolved shear stresses in off-axis grown SiC single crystals

Autor:	K. Böttcher, K. Andrew Cliffe
Rok vydání:	2007
Předmět:	Inorganic Chemistry Thermoelastic damping Materials science Shear (geology) Critical resolved shear stress Materials Chemistry Shear stress Rotational symmetry Mineralogy Condensed Matter Physics Molecular physics
Zdroj:	Journal of Crystal Growth. 303:310-313
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2006.11.162
Popis:	Three-dimensional (3D) thermoelastic stresses are computed for SiC single crystals which are grown with an off-axis orientation of the seed. The geometry is axisymmetric. The results are presented in terms of the resolved shear stress acting on the slip system. While in the on-axis case the resolved shear stress consists only of the component σ rz , in the off-axis case it consists of all stress components, whereas the dominant components are σ rz , σ rr and σ zz .
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::263f6b4c877f4d14a845b18177ff6fad https://doi.org/10.1016/j.jcrysgro.2006.11.162 Zobrazit plný text záznamu Full Text from ScienceDirect