Full-Wave Analysis and Design of a Wideband GaAs pHEMT MMIC LNA
| Autor: | Dominic Garcia, Nianhua Jiang, Jens Bornemann, Pat Niranjanan, Lewis B. G. Knee, Alireza Seyfollahi |
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| Rok vydání: | 2018 |
| Předmět: |
Physics
business.industry Frequency band Amplifier Bandwidth (signal processing) 020206 networking & telecommunications 02 engineering and technology High-electron-mobility transistor Noise figure 01 natural sciences Low-noise amplifier 010309 optics 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics Wideband business Monolithic microwave integrated circuit |
| Zdroj: | 2018 18th International Symposium on Antenna Technology and Applied Electromagnetics (ANTEM). |
| DOI: | 10.1109/antem.2018.8572912 |
| Popis: | This paper presents the design of a wideband monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) using GaAs pseudomorphic high electron mobility transistor (pHEMT) technology. The flat gain of 30 dB ±0.5 dB is achieved using a three-stage amplifier topology over 412 GHz. The minimum noise figure of 1.0 dB is achieved in a packaging chassis within the frequency band. In order to achieve such a low noise over a wideband, several bandwidth enhancement techniques are applied in the design. An inductive feedback at the source of the first stage results in a very wideband input matching ($\vert S _{\mathbf {11}}\vert < -12$ dB) over 3–15 GHz. The gold wire bonds at the input and output of the chip are separately analyzed and modeled into matching networks to ensure wideband low noise behavior of the chip after packaging. This GaAs pHEMT LNA is suitable for radio astronomy receivers such as the Atacama Large Millimeter Array Band 3 IF warm amplifiers. |
| Databáze: | OpenAIRE |
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