| Popis: |
During very high dose ion implantation, the influence of high concentrations of the ion species in the substrate makes the calculation of the final concentration profile very difficult. A concentration depth profile modeling program has been written which accounts for the expansion of the substrate due to the interaction of the ion beam atoms with the substrate. Three types of interaction have been considered: (1) weakly interacting mixture, (2) partial reaction and (3) complete compound formation. In addition to the influence of these bulk properties on the ion transport in the substrate, the substrate also influences the sputter loss of the front surface, which distorts the shape of the final profile. The model also contains realistic instantaneous Pearson distribution functions, multilayer substrates, curved substrates and multiple energy-dose implants. The predictions of the code are compared with experimentally determined high dose profiles. |
