Production and characterization of Cu2SnS3 films for solar cell applications: The effect of the sulfurization temperature on CuS secondary phase
| Autor: | Ferhunde Atay, Orhan Büyükgüngör, Elif Ketenci Ozsoy |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
Renewable Energy Sustainability and the Environment Band gap 020209 energy 02 engineering and technology Atmospheric temperature range 021001 nanoscience & nanotechnology Copper indium gallium selenide solar cells Cadmium telluride photovoltaics law.invention symbols.namesake Chemical engineering Electrical resistivity and conductivity law Phase (matter) Solar cell 0202 electrical engineering electronic engineering information engineering symbols General Materials Science 0210 nano-technology Raman spectroscopy |
| Zdroj: | Solar Energy. 214:179-188 |
| ISSN: | 0038-092X |
| DOI: | 10.1016/j.solener.2020.11.068 |
| Popis: | Cu2SnS3 is a good alternative to solve the problems related to CdTe and CIGS absorber layers having toxic, expensive and rare-earth elements. In this study, CTS films were obtained by a two-stage process that includes sulfurization of Sn-Cu metallic precursors stacked by thermal evaporation. Sulfurization process was carried out in the temperature range of 400–550 °C, and the role of the sulfurization temperature on secondary phases of CTS films was reported. XRD and Raman analyzes revealed that CTS film sulfurized at 550 °C has a highly crystalline tetragonal-CTS phase, and undesirable CuS secondary phase can be significantly minimized due to increased sulfurization temperature. Elemental analyses showed that desired Cu-poor stoichiometry was reached at 550 °C and 550 °C. Optical analyzes indicated that optical band gap values approached the optimum value for photovoltaic applications, and 1.39 eV was reached especially for CTS-550 film. Thickness and optical constants of the films were determined using spectroscopic ellipsometry. CuS secondary phase in Cu-rich CTS-400 and CTS-450 films brought metallic behavior to the materials, and electrical resistivity of the Cu-poor CTS-550 film approached the appropriate value for photovoltaic applications. Besides, surface analyzes proved that sulfurization temperature has a strong effect on the surface properties and the film surface became more compact at 550 °C. As a result, this study showed that higher sulfurization temperatures (especially 550 °C) contribute to the solution of the CuS secondary phase problem, which limits the performance of CTS-based solar cells. |
| Databáze: | OpenAIRE |
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