Increasing the quantum efficiency of InAs/GaAs QD arrays for solar cells grown by MOVPE without using strain-balance technology
Autor: | Sergey A. Mintairov, Vladimir N. Nevedomsky, Antonio Luque, Pavel N. Brunkov, A. S. Payusov, Alexey M. Nadtochiy, Viacheslav M. Andreev, M. Z. Shvarts, R. A. Salii, Nikolay A. Kalyuzhnyy, Antonio Martí |
---|---|
Rok vydání: | 2016 |
Předmět: |
010302 applied physics
Photocurrent Materials science Photoluminescence Renewable Energy Sustainability and the Environment business.industry 02 engineering and technology Quantum dot solar cell 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 7. Clean energy 01 natural sciences Electronic Optical and Magnetic Materials Quantum dot 0103 physical sciences Optoelectronics Quantum efficiency Metalorganic vapour phase epitaxy Electrical and Electronic Engineering 0210 nano-technology business Molecular beam epitaxy |
Zdroj: | Progress in Photovoltaics: Research and Applications. 24:1261-1271 |
ISSN: | 1062-7995 |
Popis: | Research into the formation of InAs quantum dots (QDs) in GaAs using the metalorganic vapor phase epitaxy technique ispresented. This technique is deemed to be cheaper than the more often used and studied molecular beam epitaxy. The bestconditions for obtaining a high photoluminescence response, indicating a good material quality, have been found among awide range of possibilities. Solar cells with an excellent quantum ef?ciency have been obtained, with a sub-bandgapphoto-response of 0.07 mA/cm2per QD layer, the highest achieved so far with the InAs/GaAs system, proving the potentialof this technology to be able to increase the ef?ciency of lattice-matched multi-junction solar cells and contributing to abetter understanding of QD technology toward the achievement of practical intermediate-band solar cells. |
Databáze: | OpenAIRE |
Externí odkaz: |