Electrical properties of p-Si1 − x Ge x Au-Based p-i-n structures and Schottky barriers

Autor:	M. U. Khazhiev, I. G. Atabaev, N. A. Matchanov, E. N. Bakhranov
Rok vydání:	2008
Předmět:	Materials science Fabrication Orders of magnitude (temperature) business.industry General Chemical Engineering Schottky barrier Metals and Alloys Analytical chemistry Schottky diode Inorganic Chemistry Reverse leakage current Guard ring Materials Chemistry Optoelectronics business
Zdroj:	Inorganic Materials. 44:675-679
ISSN:	1608-3172 0020-1685
DOI:	10.1134/s0020168508070017
Popis:	We have studied the properties of Si1 − x Gex-based p-i-n structures and Schottky barriers in which the i-region had been produced via compensation with gold. The results demonstrate that the use of a guard ring in p-Si1 − xGex〈Au〉 structures reduces the room-temperature reverse leakage current by two to three orders of magnitude. Such structures have sufficiently small reverse currents and a barrier on the order of 0.75 eV. p-Si1 − xGex〈Au〉-based guard-ring structures are suitable for the fabrication of IR and nuclear detectors.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::234bc8539180e120e6a04c70176c35a4 https://doi.org/10.1134/s0020168508070017 Zobrazit plný text záznamu Plný text ve formátu PDF