Fabrication of single-crystal silicon nanowires based on surface wet adhesion
| Autor: | Minh Nguyen, Hung N. Vu, Hoang Manh Chu, Kazuhiro Hane |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
Materials science
Silicon Hybrid silicon laser Silicon dioxide Mechanical Engineering Nanowire Silicon on insulator chemistry.chemical_element Nanotechnology Condensed Matter Physics law.invention chemistry.chemical_compound chemistry Mechanics of Materials law Etching (microfabrication) General Materials Science Wafer Photolithography |
| Zdroj: | Materials Letters. 152:94-97 |
| ISSN: | 0167-577X |
| Popis: | In this paper, we present a top–down fabrication method of single-crystal silicon nanowires. The method employs the popular photolithography technique and etching-rate dependent on the crystal orientation of single-crystal silicon in KOH solution. Using surface wet adhesion and reduced silicon dioxide etching, nanoscale SiO 2 mask line patterns with width from 45 nm to 200 nm and length up to 120 µm are successfully patterned. The interspace between nanoscale SiO 2 mask lines is 750 nm, which is narrower than the 1.2 µm feature resolution of obtainable photolithography process. A mechanism for explaining the creation of nanoscale SiO 2 mask lines based on surface wet adhesion due to the capillary force is suggested and discussed. The single-crystal silicon nanowires have been successfully fabricated by transferring the nanoscale SiO 2 mask line patterns into the top silicon layer of SOI wafer by KOH anisotropic wet-chemical etching. |
| Databáze: | OpenAIRE |
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