Comparison of transport and defects properties in hydrogenated polymorphous and amorphous silicon
| Autor: | R. Brüggemann, W. Bronner, P. Roca i Cabarrocas, D. Mencaraglia, Jean-Paul Kleider, Michael Mehring |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Free electron model
Amorphous silicon Photocurrent Materials science Condensed matter physics Silicon Band gap Photoconductivity chemistry.chemical_element Atmospheric temperature range Condensed Matter Physics Microstructure Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Materials Chemistry Ceramics and Composites |
| Zdroj: | Journal of Non-Crystalline Solids. :551-555 |
| ISSN: | 0022-3093 |
| DOI: | 10.1016/s0022-3093(01)01201-7 |
| Popis: | Due to its specific microstructure with nanocrystals embedded in an amorphous matrix, polymorphous silicon (pm-Si:H) has been shown to present interesting properties for large area electronic applications. In particular, this material exhibits a lower density of localized gap states and better transport properties than standard amorphous silicon (a-Si:H) after light-soaking. In this paper, we focus our attention on the comparison of electronic transport and defect properties of both materials. The temperature-dependent photocurrent is similar to that of high-quality a-Si:H: it shows thermal quenching in the temperature range around 250 K and becomes temperature-independent at temperatures smaller than about 40 K. Electrically detected magnetic resonance (EDMR) under illumination was performed from 296 K down to 10 K to cover a very wide temperature range wherein the photocurrent is dominated either by free electrons in the band (higher temperatures) or by energy-loss hopping (lower temperatures). The comparison with the EDMR properties of a-Si:H and μc-Si:H assists in the interpretation of the results, thereby clarifying the influence of the incorporated nanocrystals on the recombination physics in pm-Si:H. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect