Double line shrink lithography at k1= 0.16
| Autor: | Boris Habets, Matthias Markert, Peter Moll, Christoph Noelscher, Uli Scheler, Marcel Heller |
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| Rok vydání: | 2006 |
| Předmět: |
Depth of focus
Materials science business.industry Bilayer Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Optics Resist law Line (geometry) Optoelectronics Process window Electrical and Electronic Engineering Photolithography business Literature survey Lithography |
| Zdroj: | Microelectronic Engineering. 83:730-733 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2006.01.160 |
| Popis: | The gain of up to a factor of two in resolution by an integrative method is investigated. Starting from a literature survey and an application scenario the line shrink method was selected and an experiment designed. State of the art 193nm lithography and integrative processes are used. First fine lines are formed in resist at a pitch of 180nm and etched into a 1st hardmask. In a 2nd process further fine lines are produced in a bilayer resist at pitch 180nm, with a displacement of 90nm to the first layer. By use of lines of the 1st hardmask and the lines of the bilayer a pattern of dense 45nm lines at pitch 90nm has been produced by etch in a 2nd hardmask. The process window was sufficient: 0.3@mm depth of focus. CD uniformity was 1.5nm for the first and 4nm for the 2nd layer. Overlay was analysed roughly and found compatible to the assessment. The technology has potential for early development of etch processes and experiments down to 25nml/s. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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